2SA1444 transistor equivalent, silicon pnp power transistor.
a high hFE at low VCE(sat),which is ideal for use as a driver in DC/DC converters and actuators.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
.
*This type of power transistor is developed for high-speed
switching and features a high hFE at low VCE(sat),which i.
*Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -60V(Min)
*High DC Current Gain-
: hFE= 100(Min)@ (VCE= -2V , IC= -3A)
*Low Saturation Voltage-
: VCE(sat)= -0.3V(Max)@ (IC= -8A, IB= -0.4A)
*Minimum Lot-to-Lot variations for robust.
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